Principles Of Management Barrier In Communication Exam Study Material for Gate ECE

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(a) Fermi level pinning (b) I-V Characteristics of Schottky Barrier Diodes	lec16	54:33 to 54:55	PDF	VIDEO
(a) Fermi level pinning (b) I-V Characteristics of Schottky Barrier Diodes	lec16	55:24 to upto	PDF	VIDEO
Schottky Barrier Diodes I-V Characteristics and the Non-Idealities -1	lec17	01:37 to 03:51	PDF	VIDEO
Schottky Barrier Diodes I-V Characteristics and the Non-Idealities -1	lec17	11:40 to 12:47	PDF	VIDEO
Schottky Barrier Diodes I-V Characteristics and the Non-Idealities -1	lec17	15:55 to 18:29	PDF	VIDEO
Schottky Barrier Diodes I-V Characteristics and the Non-Idealities -1	lec17	19:25 to 20:18	PDF	VIDEO
Schottky Barrier Diodes I-V Characteristics and the Non-Idealities -1	lec17	20:18 to 23:43	PDF	VIDEO
Schottky Barrier Diodes I-V Characteristics and the Non-Idealities -1	lec17	50:09 to upto	PDF	VIDEO
Heterojunction Bipolar Transistors (HBT) - 3 (Continued)	lec40	51:20 to 53:05	PDF	VIDEO
Ternary Compound Semiconductors and their Applications (Contd)	lec5	12:34 to 21:26	PDF	VIDEO